SK Hynix and SanDisk Unveil First HBF Standard Specification, Capacity Up to 512GB

Odaily News: SK Hynix and SanDisk have unveiled the first standard specification for High Bandwidth Flash (HBF), a next-generation storage technology based on NAND flash. SK Hynix presented the specification at FMS 2026, held from August 4 to 6 in Santa Clara, California, USA.

HBF stacks NAND flash vertically in a manner similar to High Bandwidth Memory (HBM) to enhance capacity and data transfer speeds. The specification defines two stacked configurations—8-layer and 16-layer NAND dies—with a maximum capacity of 512GB and bandwidth offered in three tiers, supporting 0.4TB to 3.0TB per second.

HBF connects to processors using the industry-standard UCIe interface, enabling compatibility with different processor types such as GPUs and CPUs. The specification has been released through the Open Compute Project (OCP), and the HBF Consortium currently includes Google and AI semiconductor company Tenstorrent.

SK Hynix will also showcase its in-development 10th-generation (V10) 375-layer 4D NAND wafers and products for the first time at this event, with plans to begin mass production of high-performance, high-capacity enterprise SSDs (eSSD) utilizing this technology early next year.