韩媒：三星、SK海力士加码HBM研发与投资

Odaily News: Samsung Electronics and SK Hynix are accelerating their布局 in HBM and next-generation memory technologies to maintain their leading edge. Samsung Electronics stated that its R&D investment in the second quarter reached a record 16 trillion Korean won (approximately $11.6 billion), and it plans to expand its portfolio of high-end memory products such as HBM4, HBM4E, and DDR5.

SK Hynix, meanwhile, is developing next-generation technologies including HBM5, hybrid bonding, and iHBM, with capital expenditures expected to reach 40 trillion Korean won (approximately $32.6 billion) this year. (Newsis)